Semicera's 4 Inch N-mhando SiC Substrates inogadzirwa kuti isangane neiyo chaiyo zviyero zveiyo semiconductor indasitiri. Aya ma substrates anopa hwaro hwekuita hwepamusoro hwehuwandu hwemagetsi ekushandisa, achipa yakasarudzika conductivity uye zvinopisa zvivakwa.
Iyo N-type doping yeaya maSiC substrates anokwidziridza mabatiro adzo emagetsi, zvichiita kuti anyanyokodzera kune-high-power uye high-frequency application. Ichi chivakwa chinobvumira kushanda kwakanaka kwemidziyo yakadai sedhiodhi, transistors, uye amplifiers, uko kudzikisira kurasikirwa kwesimba kwakakosha.
Semicera inoshandisa mamiriro-e-the-art maitiro ekugadzira kuti ave nechokwadi chekuti imwe neimwe substrate inoratidza yakanakisa yemhando yepamusoro uye kufanana. Kurongeka uku kwakakosha pakushandisa mumagetsi emagetsi, microwave zvishandiso, uye humwe hunyanzvi hunoda kuita kwakavimbika pasi pemamiriro akanyanya.
Kubatanidza Semicera's N-mhando SiC substrates mumutsara wako wekugadzira zvinoreva kubatsirwa kubva kune zvinhu zvinopa epamusoro kupisa kupisa uye kugadzikana kwemagetsi. Aya ma substrates akanakira kugadzira zvinhu zvinoda kusimba uye kushanda zvakanaka, senge simba rekushandura masisitimu uye RF amplifiers.
Nekusarudza Semicera's 4 Inch N-mhando SiC Substrates, urikudyara mune chigadzirwa chinosanganisa hunyanzvi hwesainzi nehunyanzvi hwekuita. Semicera inoramba ichitungamira indasitiri nekupa zvigadziriso zvinotsigira kusimudzira kwekucheka-kumucheto semiconductor tekinoroji, kuve nechokwadi chekushanda kwepamusoro uye kuvimbika.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
