SOI Wafers

Tsanangudzo Pfupi

The SOI wafer is sandwich-like structure ine mitsara mitatu;Kusanganisira yepamusoro denga (mudziyo layer), pakati wakavigwa okisijeni layer (ye insulating SiO2 layer) uye pasi substrate (yakawanda nesilicon).SOI wafers anogadzirwa uchishandisa iyo SIMOX nzira uye wafer bonding tekinoroji, iyo inobvumira kutetepa uye kwakaringana maseru emidziyo, ukobvu hweyunifomu uye yakaderera density.

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SOI Wafers(1)

Nzvimbo yekushandisa

1. High-speed integrated circuit

2. Microwave zvishandiso

3. High tembiricha integrated circuit

4. Zvigadzirwa zvemagetsi

5. Low power integrated circuit

6. MEMS

7. Low voltage integrated circuit

Item		Nharo
Pakazara	Wafer Diameter 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Bow/Warp 翘曲度(	<10um
	Zvimedu 颗粒度(	0.3um <30ea
	Mafurati/Notch 定位边/定位槽	Flat kana Notch
	Kusabatanidzwa kumucheto 边缘去除(mm)	/
Device Layer 器件层	Mudziyo-layer Type/Dopant 器件层掺杂类型	N-Type/P-Type B/ P/ Sb / Sezvo
	Device-layer Oriental 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Mudziyo-musara Ukobvu 器件层厚度(um)	0.1 ~ 300um
	Device-layer Resistivity 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Device-layer Particles 器件层颗粒度(	<30ea@0.3
	Device Layer TTV 器件层TTV(	<10um
	Device Layer Finish 器件层表面处理	Yakanatswa
BOX	Akavigwa Thermal Oxide Ukobvu 埋氧层厚度(um)	50nm(500Å)~15um
Bata Layer 衬底	Bata Wafer Type/Dopant 衬底层类型	N-Type/P-Type B/ P/ Sb / Sezvo
	Bata Wafer Orientation 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Bata Wafer Resistivity 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Bata Wafer Ukobvu 衬底厚度(um)	>100um
	Bata Wafer Pedzisa 衬底表面处理	Yakanatswa
SOI wafers ezvinangwa zvakatemwa zvinogona kugadzirwa zvinoenderana nezvinodiwa nevatengi.