1.AboutSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers inoumbwa nekuisa imwe crystal layer pawafer uchishandisa silicon carbide single crystal wafer se substrate, kazhinji nemakemikari vapor deposition (CVD). Pakati pavo, silicon carbide epitaxial inogadzirirwa nekukura silicon carbide epitaxial layer pane conductive silicon carbide substrate, uye inogadzirwazve kuita yakakwirira-inoshanda michina.
2.Silicon Carbide Epitaxial WaferZvinotsanangurwa
Tinogona kupa 4, 6, 8 inches N-mhando 4H-SiC epitaxial wafers. Iyo epitaxial wafer ine hombe bandwidth, yakakwirira saturation electron drift speed, high speed two-dimensional electron gas, uye high breakdown field simba. Izvi zvimiro zvinoita kuti mudziyo uwedzere kupisa kuramba, yakakwira voltage kuramba, kukurumidza kushandura kumhanya, kuderera pa-resistance, diki saizi uye huremu huremu.
3. SiC Epitaxial Applications
SiC epitaxial waferinonyanya kushandiswa muSchottky diode (SBD), metal oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gedhi bipolar transistor (IGBT), iyo inoshandiswa. mu low-voltage, medium-voltage uye high-voltage minda. Parizvino,SiC epitaxial wafersyehigh-voltage applications iri mudanho rekutsvagisa nekusimudzira pasi rese.
