Product Description
4h-n 4inch 6inch dia100mm sic seed wafer 1mm ukobvu kuti ingot ikure
Yakagadzirirwa saizi/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/Yakakwirira kuchena 4H-N 4inch 6inch dia 150mm silicanica carbide single crystal (sic) substrates wafersS/ Yakagadzirirwa se-yakachekwa sic wafersKugadzirwa 4 giredhi 4H-N 1.5mm SIC Wafers ekristaro yembeu
Nezve Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), inozivikanwawo secarborundum, is semiconductor ine silicon uye kabhoni ine kemikari formula SiC.SiC inoshandiswa mumidziyo yemagetsi semiconductor inoshanda patembiricha yakakwira kana kuti yakakwira voltages, kana zvese zviri zviviri.SiC zvakare chimwe chezvinhu zvakakosha zve LED, inzvimbo yakakurumbira yekukura michina yeGaN, uye inoshandawo sechiparadzi chekupisa munzvimbo dzakakwirira-. magetsi LEDs.
Tsanangudzo
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Kuoma | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm.Kuwedzera Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | kwete = 2.61 | kwete = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-mhando, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Kuputsa-Kudzika Kwemagetsi Munda | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
