Semicerainodada inopa hunyanzvi hwayoGaN Epitaxymasevhisi, akagadzirirwa kuzadzisa izvo zvinogara zvichichinja zvinodiwa zveiyo semiconductor indasitiri. Gallium nitride (GaN) chinhu chinozivikanwa neayo akasarudzika zvimiro, uye yedu epitaxial kukura maitiro anovimbisa kuti mabhenefiti aya anozadzikiswa mumidziyo yako.
High-Performance GaN Layers Semicerainonyanya kugadzira zvemhando yepamusoroGaN Epitaxyakaturikidzana, achipa kuchena kwezvinhu zvisingaenzaniswi uye kusimba kwechimiro. Aya akaturikidzana akakosha kune akasiyana maapplication, kubva kumagetsi emagetsi kuenda kune optoelectronics, uko kwepamusoro kuita uye kuvimbika kwakakosha. Matanho edu ekukura chaiwo anovimbisa kuti yega yega GaN layer inosangana neiyo chaiyo miyero inodiwa pakucheka-kumucheto michina.
Optimized for EfficiencyTheGaN Epitaxyyakapihwa neSemicera yakanyatso kugadzirwa kuti iwedzere kushanda zvakanaka kwezvinhu zvako zvemagetsi. Nekuunza yakaderera-kuremara, yakakwirira-kuchena GaN layer, isu tinogonesa zvishandiso kushanda pakakwirira ma frequency uye voltages, nekudzikira kurasikirwa kwemagetsi. Iyi optimization ndiyo kiyi yezvikumbiro zvakaita seyepamusoro-electron-mobility transistors (HEMTs) uye light-emitting diodes (LEDs), uko kunyatsoshanda kwakakosha.
Yakasiyana-siyana Yekushandisa Inogona Semicera'sGaN Epitaxyinoshanda zvakasiyana-siyana, inotarisira kune dzakasiyana siyana maindasitiri uye maapplication. Kunyangwe iwe uri kugadzira magetsi amplifiers, RF zvikamu, kana laser diode, yedu GaN epitaxial layers inopa hwaro hunodiwa kune yakakwirira-inoshanda, yakavimbika michina. Maitiro edu anogona kugadzirwa kuti asangane nezvinodiwa, kuve nechokwadi chekuti zvigadzirwa zvako zvinowana mhedzisiro yakanaka.
Kuzvipira kune QualityHunhu ndiyo ibwe repakona reSemicera's approach toGaN Epitaxy. Isu tinoshandisa epitaxial kukura matekinoroji uye yakasimba nhanho yekudzora nhanho kugadzira GaN layers inoratidza yakanakisa kufanana, yakaderera densities, uye yepamusoro zvinhu zvinhu. Uku kuzvipira kune mhando kunovimbisa kuti zvishandiso zvako hazvingosangana chete asi zvinopfuura indasitiri zviyero.
Innovative Growth Techniques Semicerairi pamberi pekuvandudzwa mumunda weGaN Epitaxy. Chikwata chedu chinoramba chichiongorora nzira nyowani uye matekinoroji ekuvandudza maitiro ekukura, kuendesa GaN maseru ane akagadziridzwa magetsi uye ekupisa maitiro. Izvi zvitsva zvinoshandura kuita zvirinani-zvishandiso, zvinokwanisa kuzadzisa zvinodiwa zvechizvarwa chinotevera maapplication.
Customized Solutions for Your ProjectsTichiziva kuti chirongwa chega chega chine zvinodiwa zvakasiyana,Semicerainopa customizedGaN Epitaxymhinduro. Kunyangwe iwe uchida chaiyo doping profiles, layer thickness, kana pamusoro pekupedzisira, isu tinoshanda padhuze newe kugadzira maitiro anozadzisa zvaunoda chaizvo. Chinangwa chedu ndechekukupa iwe GaN layers dzakanyatsogadzirwa kuti dzitsigire kuita kwechishandiso chako uye kuvimbika.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
