Silicon Carbide SiC Coated Epitaxial Reactor Barrel

Tsanangudzo Pfupi

Semicera inopa huwandu hwakakwana hwema susceptors uye magirafu zvikamu zvakagadzirirwa akasiyana epitaxy reactor.

Kuburikidza nekudyidzana kwehungwaru neindasitiri inotungamira maOEM, hunyanzvi hwekugadzira zvinhu, uye hunyanzvi hwekugadzira, Semicera inopa madhizaini akagadzirirwa kusangana nezvinodiwa zvekushandisa kwako.Kuzvipira kwedu kune kugona kunovimbisa kuti iwe unogamuchira yakakwana mhinduro kune yako epitaxy reactor zvaunoda.

 

Product Detail

Product Tags

Kambani yedu inopaSiC coatingprocess masevhisi pamusoro pegraphite, ceramics uye zvimwe zvinhu neCVD nzira, kuitira kuti magasi akakosha ane kabhoni nesilicon anogona kuita pakupisa kwepamusoro kuti awane yakakwirira-kuchena maSic mamorekuru, anogona kuiswa pamusoro pezvinhu zvakavharwa kuitaSiC inodzivirira layerye epitaxy barrel type hy pnotic.

 

Main features:

1 .Kuchena kwepamusoro SiC yakavharwa graphite

2. Superior kupisa kuramba & thermal kufanana

3. ZvakanakaSiC crystal yakavharwakuitira nzvimbo yakatsetseka

4. High durability inopesana nemakemikari ekuchenesa

 
Silicon Carbide SiC Coated Epitaxial Reactor Barrel

Main Specifications yeCVD-SIC Coating

SiC-CVD Properties

Crystal Structure FCC β chikamu
Density g/cm³ 3.21
Kuoma Vickers kuoma 2500
Saizi yezviyo μm 2~10
Chemical Purity % 99.99995
Heat Capacity J·kg-1 ·K-1 640
Sublimation Temperature 2700
Felexural Strength MPa (RT 4-poindi) 415
Young's Modulus Gpa (4pt bend, 1300 ℃) 430
Kuwedzera kweThermal (CTE) 10-6K-1 4.5
Thermal conductivity (W/mK) 300

 

 
2--cvd-sic-kuchena---99-99995-_60366
5----sic-crystal_242127
Semicera Nzvimbo yebasa
Semicera nzvimbo yebasa 2
Equipment muchina
CNN kugadzirisa, kuchenesa makemikari, CVD coating
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