Mundima yemazuva ano yehunyanzvi hwemagetsi, semiconductor zvinhu zvinoita basa rakakosha.Pakati pavo, silicon carbide (SiC) seyakakura bhendi gap semiconductor zvinhu, ine zvakanakira kuita kwayo kwakanakira, senge yakakwira breakdown yemagetsi munda, yakakwira saturation kumhanya, yakakwira yekupisa conductivity, nezvimwe, zvishoma nezvishoma inove iyo yekutarisa kwevanoongorora uye mainjiniya.Iyo silicon carbide epitaxial disk, sechikamu chakakosha chayo, yakaratidza hukuru hwekushandisa.
一、epitaxial disk performance: zvizere zvakanakira
1. Ultra-yakakwirira kuputsika kwemagetsi munda: kana ichienzaniswa neyekare silicon zvinhu, iyo yekuputsika yemagetsi munda wesilicon carbide inodarika ka10.Izvi zvinoreva kuti pasi pemamiriro emagetsi akafanana, zvigadzirwa zvemagetsi zvinoshandisa silicon carbide epitaxial disks zvinogona kumira zvakanyanya, zvichiita kuti zvive nepamusoro-voltage, high-frequency, high-power electronic devices.
2. High-speed saturation speed: iyo saturation speed yesilicon carbide inopfuura 2 nguva yesilicon.Kushanda pakupisa kwakanyanya uye kumhanya kwakanyanya, iyo silicon carbide epitaxial disk inoita zviri nani, iyo inovandudza zvakanyanya kugadzikana uye kuvimbika kwemidziyo yemagetsi.
3. Kushanda kwepamusoro kwekushisa kwekushisa: kupisa kwekushisa kwesilicon carbide kunopfuura 3 nguva yesilicon.Iyi ficha inobvumira zvishandiso zvemagetsi kuti zvibvise kupisa zvirinani panguva yekuenderera mberi-simba rekushanda, nekudaro kudzivirira kupisa uye kuvandudza kuchengetedza kwechigadzirwa.
4. Yakanakisa kugadzikana kwemakemikari: munzvimbo dzakanyanyisa dzakadai sekushisa kwepamusoro, kudzvinyirirwa uye nemwaranzi yakasimba, kushanda kwesilicon carbide kuchiri kugadzikana sepakutanga.Iyi ficha inogonesa iyo silicon carbide epitaxial disk kuchengetedza kuita kwakanakisa pamberi penzvimbo dzakaoma.
二、maitiro ekugadzira: akanyatso kuvezwa
Maitiro makuru ekugadzira SIC epitaxial disk anosanganisira yemuviri vapor deposition (PVD), kemikari vapor deposition (CVD) uye epitaxial kukura.Imwe neimwe yemaitiro aya ine hunhu hwayo uye inoda kunyatso kudzora kweakasiyana ma paramita kuti uwane mhedzisiro yakanaka.
1. PVD process: Nekubuda mumhepo kana kusvipa nedzimwe nzira, chinangwa cheSiC chinoiswa pane substrate kuita firimu.Iyo firimu yakagadzirwa nenzira iyi ine kuchena kwepamusoro uye yakanaka crystallinity, asi kukurumidza kwekugadzira kunononoka.
2. CVD process: Nekupaza iyo silicon carbide source gasi pakupisa kwakanyanya, inoiswa pane substrate kuti iite firimu rakatetepa.Ukobvu uye kufanana kwefirimu rakagadzirirwa nenzira iyi zvinodzoreka, asi kuchena uye crystallinity hazvina kunaka.
3. Epitaxial kukura: kukura kweSiC epitaxial layer pane monocrystalline silicon kana zvimwe zvinhu zvemonocrystalline nemakemikari vapor deposition method.Iyo epitaxial layer yakagadzirwa neiyi nzira ine yakanaka yekufananidza uye yakanakisa kuita neiyo substrate zvinhu, asi mutengo wakakwira.
三、Tarisiro yekushandisa: Kuvhenekera ramangwana
Nekuenderera mberi kwekuvandudza tekinoroji yemagetsi tekinoroji uye kuwedzera kuri kuda kwekuita kwepamusoro uye kuvimbika kwakanyanya kwemagetsi emagetsi, silicon carbide epitaxial disk ine tarisiro yakakura yekushandisa mukugadzira semiconductor mudziyo.Inoshandiswa zvakanyanya mukugadzirwa kwepamusoro-frequency high-power semiconductor zvishandiso, zvakadai semagetsi emagetsi emagetsi, inverters, rectifiers, etc. Mukuwedzera, inoshandiswawo zvakanyanya mumasero ezuva, LED nemamwe minda.
Iine mabhenefiti ayo akasiyana ekuita uye kuenderera mberi kwekuvandudza kwemaitiro ekugadzira, silicon carbide epitaxial disk iri kuratidza zvishoma nezvishoma kugona kwayo kukuru mumunda we semiconductor.Tine chikonzero chokudavira kuti mune ramangwana resayenzi noruzivo rwokugadzira zvinhu, richaita basa rinokosha zvikuru.
Nguva yekutumira: Nov-28-2023