Nei tichifanira kuita epitaxy pane silicon wafer substrates?

Mune semiconductor indasitiri cheni, kunyanya mune yechitatu-chizvarwa semiconductor (yakafara bandgap semiconductor) indasitiri ketani, kune substrates uye.epitaxiallayers. Chii chinonzi kukosha kweepitaxiallayer? Ndeupi musiyano pakati pe substrate uye substrate?

Iyo substrate ndeyewaferyakagadzirwa semiconductor single crystal zvinhu. Iyo substrate inogona kupinda zvakananga muwaferkugadzira chinongedzo kugadzira semiconductor zvishandiso, kana inogona kugadziriswa neepitaxialnzira yekugadzira epitaxial wafers. Iyo substrate ndiyo pasi peiyowafer(cheka wafer, unogona kuwana imwe inofa mushure meimwe, wozoirongedza kuti ive yengano chip) (chaizvoizvo, pasi pechipi kazhinji kacho kakaputirwa nechekumashure goridhe, rinoshandiswa se "ivhu" yekubatanidza, asi inogadzirwa mumashure maitiro), uye chigadziko chinotakura basa rose rekutsigira (skyscraper mu chip inovakwa pane substrate).

Epitaxy inoreva nzira yekukura kristaro imwe chete pane imwe crystal substrate yakanyatsogadziriswa nekucheka, kugaya, kupukuta, nezvimwewo. Iyo itsva yekristaro inogona kunge yakafanana neyo substrate, kana inogona kuva yakasiyana. (homoepitaxial kana heteroepitaxial).
Sezvo ichangobva kuumbwa imwe crystal layer inokura pamwe ne substrate crystal phase, inonzi epitaxial layer (kazhinji microns akati wandei gobvu. Tora silicon semuenzaniso: zvinorehwa nesilicon epitaxial kukura ndiko kukura jira rekristaro rine yakanaka lattice chimiro kuperera. pasilicon single crystal substrate ine imwe crystal oientation uye yakasiyana resistivity uye ukobvu se substrate), uye substrate ine epitaxial layer inonzi epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Kugadzirwa kwemudziyo kunoitwa pane epitaxial layer.

Epitaxiality yakakamurwa kuva homoepitaxiality uye heteroepitaxiality. Homoepitaxiality ndeyekukura epitaxial layer yechinhu chimwechete se substrate pane substrate. Chii chinonzi homoepitaxiality? -Kuvandudza kugadzikana kwechigadzirwa uye kuvimbika. Kunyangwe homoepitaxiality iri kukura epitaxial layer yechinhu chakafanana neiyo substrate, kunyangwe zvinhu zvacho zvakafanana, zvinogona kuvandudza kuchena kwezvinhu uye kufanana kweiyo wafer pamusoro. Kuenzaniswa neakapepereswa mawafers akagadziridzwa nemechanic polishing, iyo substrate inogadziriswa ne epitaxiality ine yakakwirira pamusoro flatness, hutsanana hwepamusoro, hushoma hurema hudiki, uye hushoma hutsvina hwepasi. Naizvozvo, iyo resistivity yakawedzera yunifomu, uye zviri nyore kudzora kuremerwa kwepasi senge zvidimbu zvepasi, zvikanganiso zvekututira, uye dislocation. Epitaxy haingonatsiridza kuita kwechigadzirwa, asi zvakare inovimbisa kugadzikana kwechigadzirwa uye kuvimbika.
Ndeapi mabhenefiti ekugadzira imwe layer yesilicon maatomu epitaxial pane iyo silicon wafer substrate? MuCMOS silicon process, epitaxial kukura (EPI, epitaxial) pawafer substrate inhanho yakakosha.
1. Kuvandudza kunaka kwekristaro
Yekutanga substrate kukanganisa uye kusvibiswa: Iyo wafer substrate inogona kunge iine humwe hurema uye kusvibiswa panguva yekugadzira. Kukura kweiyo epitaxial layer inogona kuburitsa yakakwirira-mhando, yakaderera-chirema uye isina kuchena-concentration single-crystalline silicon layer pane substrate, iyo inonyanya kukosha kune inotevera dhizaini kugadzirwa. Uniform crystal structure: Epitaxial kukura kunogona kuvimbisa imwe yunifomu yekristaro chimiro, kuderedza simba rezviyo miganhu uye kukanganisa mu substrate material, uye nokudaro kuvandudza kristall quality yewafer yose.
2. Kuvandudza kushanda kwemagetsi
Gadzirisa hunhu hwechishandiso: Nekukura epitaxial layer pane substrate, iyo doping yekumisikidza uye mhando yesilicon inogona kunyatso dzorwa kuti ikwidze kushanda kwemagetsi kwechishandiso. Semuenzaniso, iyo doping ye epitaxial layer inogona kunyatsogadzirisa chikumbaridzo voltage uye mamwe magetsi emagetsi eMOSFET. Deredza kudonha ikozvino: Yepamusoro-mhando epitaxial layers ine yakaderera density density, iyo inobatsira kuderedza kuvuza ikozvino mumudziyo, nekudaro kuvandudza mashandiro uye kuvimbika kwechishandiso.
3. Tsigira advanced process node
Kuderedza saizi yemhando: Mudiki maitirwo node (se7nm, 5nm), saizi yemhando yemudziyo inoramba ichidzikira, ichida zvimwe zvakanatswa uye zvemhando yepamusoro. Epitaxial kukura tekinoroji inogona kuzadzisa izvi zvinodiwa uye inotsigira yakakwirira-kuita uye yakakwirira-density yakabatanidzwa yedunhu kugadzira. Vandudza breakdown voltage: Iyo epitaxial layer inogona kugadzirwa kuti ive nepamusoro breakdown voltage, iyo yakakosha pakugadzira michina ine simba uye yakakwirira-voltage. Semuenzaniso, mumagetsi emagetsi, iyo epitaxial layer inogona kuwedzera kuparara kwemagetsi echishandiso uye kuwedzera yakachengeteka inoshanda renji.
4. Maitiro ekuenderana uye akawanda-layer chimiro
Multi-layer chimiro: Epitaxial kukura tekinoroji inobvumira akawanda-layer zvimiro kukura pane substrate, uye akasiyana akaturikidzana anogona kuve akasiyana doping kutarisisa uye marudzi. Izvi zvinobatsira kwazvo pakugadzira michina yakaoma yeCMOS uye kuwana matatu-dimensional kubatanidzwa. Kugarisana: Iyo epitaxial yekukura maitiro inoenderana zvakanyanya neiyo iripo CMOS yekugadzira maitiro uye inogona kubatanidzwa nyore nyore mune iripo yekugadzira maitiro pasina kunyatso shandura mitsara yemaitiro.