Semicerainosuma zvemhando yepamusoroSi Epitaxymasevhisi, akagadzirirwa kuzadzisa iwo chaiwo mwero weanhasi semiconductor indasitiri. Epitaxial silicon layers yakakosha pakuita uye kuvimbika kwemidziyo yemagetsi, uye yedu Si Epitaxy mhinduro inova nechokwadi chekuti zvikamu zvako zvinowana kushanda kwakakwana.
Precision-Yakakura Silicon Layers Semicerainonzwisisa kuti hwaro hwezvigadzirwa zvepamusoro-soro zviri muhutano hwezvinhu zvinoshandiswa. YeduSi Epitaxymaitiro anodzorwa zvine hungwaru kugadzira silicon layer ine yakasarudzika yakafanana uye kristaro kutendeseka. Aya mataira akakosha kune maapplication kubva kumicroelectronics kusvika kune epamberi magetsi emagetsi, uko kuenderana uye kuvimbika kwakakosha.
Yakagadzirirwa Kushanda KwechishandisoTheSi Epitaxymasevhisi anopihwa neSemicera akagadzirirwa kusimudzira zvivakwa zvemagetsi zvemidziyo yako. Nekukura yakakwirira-kuchena silicon maseru ane hurema hwakaderera densities, isu tinoona kuti zvikamu zvako zvinoshanda pazvakanakisa, nekuvandudzwa kwekufambisa kwekutakura uye kushomeka kwemagetsi ekudzivirira. Iyi optimization yakakosha pakuwana iyo yepamusoro-kumhanya uye yepamusoro-soro maitiro anodiwa nehunyanzvi hwazvino.
Kusiyana-siyana muMaapplication Semicera'sSi Epitaxyinokodzera zvakasiyana-siyana zvekushandisa, kusanganisira kugadzirwa kweCMOS transistors, simba MOSFETs, uye bipolar junction transistors. Yedu inochinjika maitiro inobvumira kugadzirisa zvichienderana nezvinodiwa chaizvo zvepurojekiti yako, ingave iwe uchida matete akatetepa eakakwira-frequency maapplication kana makobvu emagetsi emagetsi.
Superior Material QualityHunhu huri pamwoyo wezvese zvatinoita paSemicera. YeduSi Epitaxymaitiro anoshandisa mamiriro-e-iyo-hunyanzvi midziyo uye matekiniki ekuona kuti imwe neimwe silicon layer inosangana nemhando yepamusoro yekuchena uye kuvimbika kwechimiro. Uku kutarisisa kune zvakadzama kunoderedza kuitika kwehurema hunogona kukanganisa mashandiro emudziyo, zvichikonzera zvimwe zvinovimbika uye zvinogara kwenguva refu.
Kuzvipira kune Innovation Semicerayakazvipira kugara kumberi kwesemiconductor tekinoroji. YeduSi Epitaxymasevhisi anoratidza kuzvipira uku, kubatanidza kufambira mberi kwazvino mu epitaxial kukura matekiniki. Isu tinoramba tichikwenenzvera maitiro edu kuendesa silicon layer inosangana nezvinoda kuitika zveindasitiri, tive nechokwadi chekuti zvigadzirwa zvako zvinoramba zvichikwikwidza mumusika.
Tailored Solutions kune ZvaunodaKunzwisisa kuti chirongwa chega chega chakasiyana,Semicerainopa customizedSi Epitaxymhinduro dzinoenderana nezvido zvako. Kunyangwe iwe uchida mamwe maprofiles edoping, kukora kwemusara, kana kupera kwepamusoro, timu yedu inoshanda padhuze newe kuendesa chigadzirwa chinoenderana nezvako chaizvo.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
