Si Epitaxy

Tsanangudzo Pfupi:

Si Epitaxy-Gadzirisa kuita kwepamusoro kwechishandiso neSemicera's Si Epitaxy, inopa chaiyo-yakakura silicon masaga epamberi semiconductor application.


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Semicerainosuma yemhando yepamusoroSi Epitaxymasevhisi, akagadzirirwa kuzadzisa iwo chaiwo mwero weanhasi semiconductor indasitiri. Epitaxial silicon layers yakakosha pakuita uye kuvimbika kwemidziyo yemagetsi, uye yedu Si Epitaxy mhinduro inova nechokwadi chekuti zvikamu zvako zvinowana kushanda kwakakwana.

Precision-Yakakura Silicon Layers Semicerainonzwisisa kuti hwaro hwezvigadzirwa zvepamusoro-soro zviri muhutano hwezvinhu zvinoshandiswa. YeduSi Epitaxymaitiro anodzorwa zvine hungwaru kugadzira silicon layer ine yakasarudzika yakafanana uye kristaro kutendeseka. Aya mataira akakosha kune maapplication kubva kumicroelectronics kusvika kune epamberi magetsi emagetsi, uko kuenderana uye kuvimbika kwakakosha.

Yakagadzirirwa Kushanda KwechishandisoTheSi Epitaxymasevhisi anopihwa neSemicera akagadzirirwa kusimudzira zvivakwa zvemagetsi zvemidziyo yako. Nekukura yakakwirira-kuchena silicon maseru ane hurema hwakaderera densities, isu tinoona kuti zvikamu zvako zvinoshanda nepamusoro pazvo, nekuvandudza mutakuri wekufamba uye kushomeka kwemagetsi kuramba. Iyi optimization yakakosha pakuwana iyo yepamusoro-yekumhanya uye yepamusoro-soro maitiro anodiwa nehunyanzvi hwazvino.

Kusiyana-siyana muMaapplication Semicera'sSi Epitaxyinokodzera zvakasiyana-siyana zvekushandisa, kusanganisira kugadzirwa kweCMOS transistors, simba MOSFETs, uye bipolar junction transistors. Yedu inochinjika maitiro inobvumira kugadzirisa zvichienderana nezvinodiwa chaizvo zvepurojekiti yako, ingave iwe uchida matete akatetepa eakakwira-frequency maapplication kana makobvu emagetsi emagetsi.

Superior Material QualityHunhu huri pamwoyo wezvese zvatinoita paSemicera. YeduSi Epitaxymaitiro anoshandisa mamiriro-e-iyo-hunyanzvi midziyo uye matekiniki ekuona kuti imwe neimwe silicon layer inosangana nemhando yepamusoro yekuchena uye kuvimbika kwechimiro. Uku kutarisisa kune zvakadzama kunoderedza kuitika kwehurema hunogona kukanganisa mashandiro emudziyo, zvichikonzera zvimwe zvinovimbika uye zvinogara kwenguva refu.

Kuzvipira kune Innovation Semicerayakazvipira kugara kumberi kwesemiconductor tekinoroji. YeduSi Epitaxymasevhisi anoratidza kuzvipira uku, kubatanidza kufambira mberi kwazvino mu epitaxial kukura matekiniki. Isu tinoramba tichikwenenzvera maitiro edu kuendesa silicon layer inosangana nezvinodiwa zvinoshanduka zveindasitiri, tive nechokwadi chekuti zvigadzirwa zvako zvinoramba zvichikwikwidza mumusika.

Tailored Solutions kune ZvaunodaKunzwisisa kuti chirongwa chega chega chakasiyana,Semicerainopa customizedSi Epitaxymhinduro dzinoenderana nezvido zvako. Kunyangwe iwe uchida mamwe maprofiles edoping, kukora kwemusara, kana kupera kwepamusoro, timu yedu inoshanda padhuze newe kuendesa chigadzirwa chinoenderana nezvako chaizvo.

Items

Kugadzirwa

Tsvakurudzo

Dummy

Crystal Parameters

Polytype

4H

Kutadza kwekutarisa pamusoro

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-mhando Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Ukobvu

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat urefu

47.5±1.5mm

Secondary flat

Hapana

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Mberi(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Chimiro

Micropipe density

<1 pa/cm2

<10 ea/cm2

<15 ea/cm2

Metal tsvina

≤5E10atomu/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Mberi Hunhu

Mberi

Si

Surface finish

Si-face CMP

Zvimedu

≤60ea/wafer (saizi≥0.3μm)

NA

Makwara

≤5ea/mm. Kureba kwekuwedzera ≤Diameter

Cumulative kureba≤2*Diameter

NA

Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa

Hapana

NA

Edge chips/indents/fracture/hex plates

Hapana

Polytype nzvimbo

Hapana

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

Hapana

Back Quality

Back finish

C-chiso CMP

Makwara

≤5ea/mm,Cumulative kureba≤2*Diameter

NA

Kuremara kumashure (kumucheto machipisi / indents)

Hapana

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (kubva kumusoro kumucheto)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-yakagadzirira ine vacuum packaging

Multi-wafer kaseti kurongedza

* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD.

tech_1_2_size
SiC wafers

  • Zvakapfuura:
  • Zvinotevera: