Semicera'sSilicon Carbide Epitaxyinogadzirwa kuti isangane nezvinoda kuomarara zvemazuva ano semiconductor application. Nekushandisa advanced epitaxial kukura matekiniki, tinova nechokwadi chekuti silicon carbide layer inoratidza yakasarudzika mhando yekristaro, kufanana, uye kushomeka kwehurema. Aya maitiro akakosha pakugadzira epamusoro-inoshanda magetsi emagetsi, uko kushanda nesimba uye kudziya kwekutonga kwakakosha.
TheSilicon Carbide Epitaxyprocess paSemicera inogadziridzwa kuburitsa epitaxial layers ine ukobvu chaihwo uye doping control, kuve nechokwadi chekuita kunoenderana mumhando dzakasiyana dzemidziyo. Iyi nhanho yehutsanana yakakosha kune zvikumbiro mumotokari dzemagetsi, masisitimu emagetsi anogona kudzokororwa, uye nepamusoro-frequency kutaurirana, uko kuvimbika uye kugona kwakakosha.
Uyezve, Semicera'sSilicon Carbide Epitaxyinopa yakawedzera kupisa conductivity uye yakakwirira breakdown voltage, zvichiita kuti ive sarudzo yakasarudzika yemidziyo inoshanda pasi pemamiriro akanyanya. Izvi zvivakwa zvinobatsira kuhurefu hwehupenyu hwechishandiso uye nekunatsiridza mashandiro ehurongwa hwese, kunyanya munzvimbo dzine simba repamusoro uye tembiricha.
Semicera inopawo maitiro ekugadzirisaSilicon Carbide Epitaxy, kubvumira mhinduro dzakagadzirirwa dzinosangana nezvinodiwa zvechishandiso. Zvingave zvekutsvaga kana kugadzirwa kwakakura, epitaxial layers yedu yakagadzirirwa kutsigira chizvarwa chinotevera chekugadzira semiconductor, zvichiita kuti kuvandudzwa kwezvishandiso zvemagetsi zvine simba, zvinoshanda, uye zvakavimbika.
Nekubatanidza yekucheka-kumucheto tekinoroji uye yakaomesesa yemhando yekudzora maitiro, Semicera inovimbisa kuti yeduSilicon Carbide Epitaxyzvigadzirwa hazvingosangana chete asi zvinopfuura mwero weindasitiri. Kuzvipira uku kune kunaka kunoita kuti epitaxial layers yedu ive hwaro hwakakodzera hwepamberi semiconductor application, ichigadzira nzira yekubudirira mumagetsi emagetsi uye optoelectronics.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
