Semiceraanofara kupa2" Gallium Oxide Substrates, chinhu chekucheka-chepamusoro chakagadzirirwa kusimudzira mashandiro emhando yepamusoro semiconductor zvishandiso. Aya ma substrates, akagadzirwa kubva kuGallium Oxide (Ga2O3), ine Ultra-wide bandgap, ichivaita sarudzo yakanaka kune yakakwirira-simba, yakakwirira-frequency, uye UV optoelectronic application.
Zvinokosha:
• Ultra-Wide Bandgap:The2" Gallium Oxide Substratesinopa yakatanhamara bandgap ingangoita 4.8 eV, inobvumira kune yakakwira voltage uye tembiricha kushanda, inopfuura nekure kugona kwechinyakare semiconductor zvinhu sesilicon.
•Exceptional Breakdown Voltage: Aya ma substrates anogonesa midziyo kubata yakanyanya kukwira voltages, ichiita kuti ive yakakwana kumagetsi emagetsi, kunyanya mune yakakwirira-voltage application.
•Yakanakisa Thermal Conductivity: Nepamusoro-soro kugadzikana kwekushisa, aya ma substrates anochengetedza kushanda kwakafanana kunyange munzvimbo dzakanyanyisa kupisa, dzakanakira kushandiswa kwemasimba makuru uye kupisa kwepamusoro.
•Yepamusoro-soro Material:The2" Gallium Oxide Substratesipa yakaderera densities uye yakakwirira crystalline mhando, kuve nechokwadi chekuvimbika uye chinoshanda kuita kweako semiconductor zvishandiso.
•Zvishandiso Zvakasiyana-siyana: Aya ma substrates akakodzera huwandu hwemashandisirwo, anosanganisira emagetsi transistors, Schottky diodes, uye UV-C LED zvishandiso, zvinopa hwaro hwakasimba hwezvese simba uye optoelectronic innovations.
Vhura iyo yakazara kugona kweako semiconductor zvishandiso neSemicera's2" Gallium Oxide Substrates. Ma substrates edu akagadzirirwa kusangana nezvinodiwa zvinodikanwa zvemazuva ano epamberi maapplication, kuve nechokwadi chekushanda kwepamusoro, kuvimbika, uye kushanda nesimba. Sarudza Semicera yemhando-ye-iyo-art semiconductor zvinhu zvinotyaira hunyanzvi.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
