Gallium Nitride Substrates|GaN Wafers

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Gallium nitride (GaN), senge silicon carbide (SiC) zvinhu, ndeyechizvarwa chechitatu chesemiconductor zvinhu zvine hupamhi bhendi gap upamhi, ine hombe bhendi gap hupamhi, yakakwirira yekupisa conductivity, yakakwira electron saturation migration rate, uye high breakdown yemagetsi munda wakasarudzika. maitiro.Zvigadzirwa zveGaN zvine tarisiro yekushandiswa kwakasiyana-siyana muhuwandu hwehuwandu, hupamhi hwepamusoro uye nzvimbo dzinoda simba guru dzakadai se LED inochengetedza magetsi, laser projection display, motokari itsva dzemagetsi, smart grid, 5G kutaurirana.

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Yechitatu chizvarwa semiconductor zvinhu zvinonyanya kusanganisira SiC, GaN, diamond, nezvimwewo, nekuti bhendi gap upamhi (Eg) rakakura kupfuura kana kuenzana ne2.3 electron volts (eV), inozivikanwawo seyakafara bhendi gap semiconductor zvinhu.Zvichienzaniswa neyekutanga neyechipiri chizvarwa semiconductor zvinhu, chizvarwa chechitatu semiconductor zvinhu zvine zvakanakira high thermal conductivity, high breakdown electric field, high saturated electron migration rate uye high bonding simba, izvo zvinogona kuzadzisa zvinodiwa zvitsva zvemazuva ano zvemagetsi tekinoroji. tembiricha, simba guru, high pressure, high frequency uye radiation resistance nemamwe mamiriro akaomarara.Iyo ine zvakakosha zvekushandisa tarisiro muminda yekudzivirira yenyika, ndege, ndege, kuongorora mafuta, kuchengetwa kwemaziso, nezvimwewo, uye inogona kuderedza kurasikirwa kwesimba neanopfuura 50% mumaindasitiri mazhinji ane hunyanzvi senge Broadband kutaurirana, simba rezuva, kugadzira mota, semiconductor lighting, uye smart grid, uye inogona kuderedza vhoriyamu yemidziyo neinopfuura 75%, inova yakakosha mukusimudzira sainzi uye tekinoroji.

Item 项目	GaN-FS-CU-C50	GaN-FS-CN-C50	GaN-FS-C-SI-C50
Diameter 晶圆直径	50.8 ± 1 mm
Ukobvu厚度	350 ± 25 μm
Orientation 晶向	C ndege (0001) kubva pakona yakananga kuM-axis 0.35 ± 0.15°
Prime Flat 主定位边	(1-100) 0 ± 0.5°, 16 ± 1 mm
Secondary Flat 次定位边	(11-20) 0 ± 3°, 8 ± 1 mm
Conductivity 导电性	N-mhando	N-mhando	Semi-Insulating
Resistivity (300K) 电阻率	<0.1 Ω·cm	<0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 μm
BOW 弯曲度	≤ 20 μm
Ga Face Surface roughness Ga面粗糙度	<0.2 nm (yakakwenenzverwa);
	kana <0.3 nm (yakakwenenzverwa uye kurapwa kwepamusoro kwe epitaxy)
N Face Surface Kukasharara N面粗糙度	0.5 ~ 1.5 μm
	sarudzo: 1 ~ 3 nm (pasi rakanaka);<0.2 nm (yakakwenenzverwa)
Dislocation Density 位错密度	Kubva 1 x 105 kusvika 3 x 106 cm-2 (yakaverengwa neCL)*
Macro Defect Density 缺陷密度	<2cm-2
Inoshandiswa Nzvimbo 有效面积	> 90% (kumucheto uye macro defects kusabatanidzwa)
Inogona kugadzirwa zvinoenderana nezvinodiwa nevatengi, chimiro chakasiyana chesilicon, safiro, SiC yakavakirwa GaN epitaxial sheet.