GaAs Wafers|GaAs Epi Wafers|Galllium Arsenide Substrates

Tsanangudzo Pfupi

WeiTai Energy Technology Co., Ltd. mutengesi anotungamira anonyanya hunyanzvi mune wafer uye yepamusoro semiconductor yekushandisa.Isu takatsaurirwa kupa zvemhando yepamusoro, zvakavimbika, uye zvigadzirwa zvitsva kune semiconductor kugadzira, photovoltaic indasitiri uye mamwe ane hukama minda.

Mutsetse wedu wechigadzirwa unosanganisira SiC/TaC yakavharwa magirafu zvigadzirwa uye zvigadzirwa zveceramic, zvinosanganisira zvinhu zvakasiyana siyana sesilicon carbide, silicon nitride, uye aluminium oxide nezvimwe.

Parizvino, ndisu chete mugadziri kupa kuchena 99.9999% SiC coating uye 99.9% recrystallized nesilicon carbide.Iyo yakakura SiC yekupfeka kureba tinogona kuita 2640mm.

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MaGaAs substrates akakamurwa kuita conductive uye semi-insulating, ayo anoshandiswa zvakanyanya mu laser (LD), semiconductor light-emitting diode (LED), pedyo-infrared laser, quantum zvakanaka high-simba laser uye yakakwirira-inoshanda solar panels.HEMT uye HBT machipisi e radar, microwave, millimeter wave kana Ultra-yakakwira kumhanya makomputa uye optical communications;Redhiyo frequency midziyo yekutaurirana isina waya, 4G, 5G, satellite kutaurirana, WLAN.

Munguva pfupi yapfuura, gallium arsenide substrates yakaitawo kufambira mberi kukuru mu mini-LED, Micro-LED, uye tsvuku LED, uye inoshandiswa zvakanyanya muAR / VR michina inopfeka.

Diameter 晶片直径	50mm \|75mm \|100mm \|150mm
Kukura Nzira 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Wafer Ukobvu 厚度	350 um ~ 625 um
Orientation 晶向	<100> / <111> / <110> kana vamwe
Conductive Type 导电类型	P - mhando / N - mhando / Semi-inodzivirira
Type/Dopant 掺杂剂	Zn / Si / isina kubviswa
Carrier Concentration 载流子浓度	1E17 ~ 5E19 cm-3
Resistivity paRT 室温电阻率(ohm•cm)	≥1E7 yeSI
Mobility 迁移率(cm2/V•Sec)	≥4000
EPD ( Etch Pit Density) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Bow / Warp 翘曲度	≤ 20 um
Surface Finish 表面	DSP/SSP
Laser Mark 激光码
Giredhi 等级	Epi yakakwenenzverwa giredhi / mechanika giredhi