Semiceraanodada anosuma ayo4" Gallium Oxide Substrates, chinhu chinoputsa pasi chakagadzirwa kuti chisangane nezvinodiwa zvinokura zvemhando yepamusoro-yekuita semiconductor michina. Gallium Oxide (Ga2O3) ma substrates anopa Ultra-wide bandgap, ichiita kuti ive yakakodzera kune inotevera-chizvarwa magetsi magetsi, UV optoelectronics, uye yakakwirira-frequency zvishandiso.
Zvinokosha:
• Ultra-Wide Bandgap:The4" Gallium Oxide Substratesinozvikudza bandgap ingangoita 4.8 eV, ichibvumira yakasarudzika voltage uye tembiricha kushivirira, zvakanyanya kupfuura zvechinyakare semiconductor zvinhu sesilicon.
•High Breakdown Voltage: Aya ma substrates anogonesa midziyo kushanda pamagetsi epamusoro uye masimba, zvichiita kuti ive yakakwana kune yakakwira-voltage application mumagetsi emagetsi.
•Superior Thermal Kugadzikana: Gallium Oxide substrates inopa yakanakisa kupisa conductivity, kuve nechokwadi chekuita kwakagadzikana pasi pemamiriro akanyanya, akanakira kushandiswa munzvimbo dzinoda.
•High Material Quality: Iine yakaderera densities uye yakakwirira yekristaro mhando, aya ma substrates anovimbisa kuita kwakavimbika uye kunoenderana kuita, kunowedzera kushanda uye kusimba kwemidziyo yako.
•Versatile Application: Inokodzera kushandiswa kwakasiyana-siyana, kusanganisira magetsi transistors, Schottky diodes, uye UV-C LED madivayiri, zvichiita kuti hutsva mune zvose simba uye optoelectronic minda.
Ongorora ramangwana re semiconductor tekinoroji neSemicera's4" Gallium Oxide Substrates. Ma substrates edu akagadzirwa kuti atsigire akanyanya epamusoro maapplication, achipa kuvimbika uye kugona kunodiwa kune yanhasi yekucheka-kumucheto michina. Vimba neSemicera yemhando uye hunyanzvi mune yako semiconductor zvinhu.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
