Semicera inodada kuratidza iyoGa2O3Substrate, chinhu chinocheka-kumucheto chagadzirira kushandura magetsi emagetsi uye optoelectronics.Gallium Oxide (Ga2O3) substratesvanozivikanwa nokuda kwe-ultra-wide bandgap, zvichiita kuti zvive zvakanaka kune-high-power uye high-frequency devices.
Zvinokosha:
• Ultra-Wide Bandgap: Ga2O3 inopa bandgap ingangoita 4.8 eV, ichiwedzera zvakanyanya kugona kwayo kubata yakakwira voltages uye tembiricha zvichienzaniswa nemidziyo yechinyakare seSilicon neGaN.
• High Breakdown Voltage: Nenzvimbo yakasarudzika yekuputsika, iyoGa2O3Substrateyakanakira michina inoda kushanda kwe-high-voltage, kuve nechokwadi chekushanda kwakanyanya uye kuvimbika.
• Thermal Stability: The material's superior thermal stability inoita kuti ive yakakodzera kushandiswa munzvimbo dzakanyanyisa, kuchengetedza kushanda kunyange pasi pemamiriro ezvinhu akaoma.
• Zvishandiso Zvakasiyana-siyana: Yakanakira kushandiswa mune yakakwirira-inoshanda simba transistors, UV optoelectronic zvishandiso, uye nezvimwe, zvichipa hwaro hwakasimba hwemhando yepamusoro yemagetsi masisitimu.
Sangana neramangwana re semiconductor tekinoroji neSemicera'sGa2O3Substrate. Yakagadzirwa kuti isangane nezvinodiwa zviri kukura zvemagetsi epamusoro-simba uye akakwira-frequency emagetsi, iyi substrate inoisa mwero mutsva wekuita uye kusimba. Vimba neSemicera kuunza mhinduro nyowani kune ako akanyanya kunetsa maapplication.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
