Kukura Verification
Thesilicon carbide (SiC)makristasi embeu akagadzirwa achitevera maitiro akatsanangurwa uye akasimbiswa kuburikidza neSiC crystal kukura. Chikuva chekukura chakashandiswa chaive chakazvigadzira chega cheSiC induction yekukura tembiricha ine tembiricha yekukura ye2200 ℃, kudzvanywa kwekukura kwe200 Pa, uye nguva yekukura kwemaawa zana.
Kugadzirira kunosanganisira a6-inch SiC wafernezviso zvekabhoni nesilicon zvakakwenenzverwa, awaferUkobvu hwakafanana hwe ≤10 µm, uye kushata kwesilicon kwe ≤0.3 nm. A 200 mm dhayamita, 500 µm gobvu graphite bepa, pamwe neglue, doro, uye machira asina-lint akagadzirwa zvakare.
TheSiC waferyakanga yakarukwa-yakanamirwa pamusoro pechisungo chepamusoro kwemasekonzi gumi nemashanu pa1500 r/min.
The adhesive pamusoro bonding pamusoroSiC waferyakaomeswa pandiro inopisa.
Iyo graphite bepa uyeSiC wafer(bonding surface yakatarisa pasi) yakarongedzwa kubva pasi kusvika kumusoro uye yakaiswa mumhodzi yekristaro inopisa yevira. Iyo inopisa yekutsikirira yakaitwa zvinoenderana neyakagadzirirwa hot press process. Mufananidzo 6 inoratidza mhodzi yekristaro pamusoro mushure mekukura. Zvinogona kuonekwa kuti mhodzi yekristaro yepamusoro yakatsetseka isina zviratidzo zve delamination, zvichiratidza kuti makristasi embeu yeSiC akagadzirirwa muchidzidzo ichi ane unhu hwakanaka uye dense bonding layer.
Mhedziso
Tichifunga nezvezvino kusungirirwa uye nzira dzekurembera dzembeu crystal fixation, nzira yakasanganiswa yekubatanidza uye kurembera yakarongwa. Ichi chidzidzo chakanangana nekugadzirira kabhoni firimu uyewafer/ graphite bepa bonding process inodiwa kune iyi nzira, zvichitungamira kune zvinotevera mhedziso:
Iyo viscosity yekunamatira inodiwa kune kabhoni firimu pawafer inofanira kunge iri 100 mPa · s, ine carbonization tembiricha ye ≥600 ℃. Iyo yakakwana carbonization nharaunda ndeye argon-yakachengetedzwa mamiriro. Kana yakaitwa pasi pemamiriro ekunze, iyo vacuum degree inofanirwa kunge iri ≤1 Pa.
Zvese zviri zviviri kabhoni uye nzira dzekubatanidza dzinoda kudzika-tembiricha kuporeswa kweiyo carbonization uye mabhandi anonamira pawafer pamusoro kuti abudise magasi kubva kunamata, kudzivirira peeling uye isina hurema mune yekubatanidza layer panguva yecarbonization.
Iyo yekubatanidza inonamatira yewafer / graphite bepa inofanira kuva ne viscosity ye25 mPa · s, ine bonding pressure ye ≥15 kN. Panguva yekubatanidza, tembiricha inofanira kusimudzwa zvishoma nezvishoma mumhando yepasi-tembiricha (<120℃) pamusoro pemaawa angangoita 1.5. Iyo SiC crystal yekukura verification yakasimbisa kuti yakagadzirwa SiC mhodzi makristasi anosangana nezvinodiwa zvemhando yepamusoro yeSiC crystal kukura, ine yakatsetseka mhodzi yekristaro uye isina mvura.
Nguva yekutumira: Jun-11-2024