Silicon Carbide Substrates | SiC Wafers

Tsanangudzo Pfupi:

Semicera Energy Technology Co, Ltd. mutengesi anotungamira anoshanda mune wafer uye epamberi semiconductor consumables. Isu takatsaurirwa kupa zvemhando yepamusoro, zvakavimbika, uye zvigadzirwa zvitsva kune semiconductor kugadzira, photovoltaic indasitiri uye mamwe ane hukama minda.

Mutsetse wedu wechigadzirwa unosanganisira SiC/TaC yakavharwa magirafu zvigadzirwa uye zvigadzirwa zveceramic, zvinosanganisira zvinhu zvakasiyana siyana sesilicon carbide, silicon nitride, uye aluminium oxide nezvimwe.

Parizvino, ndisu chete mugadziri kupa kuchena 99.9999% SiC coating uye 99.9% recrystallized nesilicon carbide. Iyo yakakura SiC yekupfeka kureba tinogona kuita 2640mm.

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Silicon carbide (SiC) single crystal material ine bhendi hombe gap upamhi (~Si 3 nguva), high thermal conductivity (~Si 3.3 nguva kana GaAs ka10), high electron saturation migration rate (~Si 2.5 times), high breakdown magetsi munda (~ Si 10 nguva kana GaAs 5 nguva) uye mamwe maitiro akatanhamara.

Zvishandiso zveSiC zvine zvakanakira zvisingadzoreki mumunda wekupisa kwepamusoro, kudzvanywa, kukwirisa, kukwira kwemagetsi, masimba emagetsi emagetsi uye akanyanya kushandiswa kwezvakatipoteredza senge aerospace, mauto, simba renyukireya, nezvimwe, zvinogadzira hurema hwechinyakare semiconductor zvinhu zvishandiso zvinoshanda. maapplication, uye zvishoma nezvishoma vari kuve iwo makuru emagetsi semiconductors.

4H-SiC Silicon carbide substrate tsanangudzo

Item项目	Specifications参数
Polytype 晶型	4H -SiC	6H- SiC
Diameter 晶圆直径	2 inch \| 3 inch \| 4 inch \| 6inch	2 inch \| 3 inch \| 4 inch \| 6inch
Ukobvu 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Conductivity 导电类型	N - mhando / Semi-inodzivirira N型导电片/ 半绝缘片	N - mhando / Semi-inodzivirira N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nitrogen)V (Vanadium)	N2 (Nitrogen) V (Vanadium)
Orientation 晶向	Paaxis <0001> Kubva paaxis <0001> kubva pa4°	Paaxis <0001> Kubva paaxis <0001> kubva pa4°
Resistivity 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Micropipe Density (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Bow / Warp 翘曲度	≤25 μm	≤25 μm
Surface 表面处理	DSP/SSP	DSP/SSP
Giredhi 产品等级	Kugadzira / giredhi rekutsvaga	Kugadzira / giredhi rekutsvaga
Crystal Stacking Sequence 堆积方式	ABCB	ABCABC
Lattice parameter 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Eg/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε (Dielectric Constant) 介电常数	9.6	9.66
Refraction Index 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide substrate tsanangudzo

Item项目	Specifications参数
Polytype 晶型	6H-SiC
Diameter 晶圆直径	4 inch \| 6inch
Ukobvu 厚度	350μm ~ 450μm
Conductivity 导电类型	N - mhando / Semi-inodzivirira N型导电片/ 半绝缘片
Dopant 掺杂剂	N2( Nitrogen) V ( Vanadium )
Orientation 晶向	<0001> kubva pa4°± 0.5°
Resistivity 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Type)
Micropipe Density (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Bow / Warp 翘曲度	≤25 μm
Surface 表面处理	Si Face: CMP, Epi-Yakagadzirira C Chiso: Optical Polish
Giredhi 产品等级	Research giredhi